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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1023 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1413 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-220Fa) and symbol HAN INC Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -60 -40 -5 -3 -0.5 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 20 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1023 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-25mA; IB=0 IC=-2A ;IB=-4mA IC=-2A ;IB=-4mA VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN -40 -1.5 -2.0 -20 -2.5 |I TYP. MAX UNIT V V V A mA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Switching times ton tstg tf Turn-on time Storage time Fall time HAN INC SEM GE IB1=-IB2=-6mA VCC=-30V ,RL=10| OND IC TOR UC 0.30 |I |I |I 0.60 0.25 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1023 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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